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| SML50W40 TO-267 Package Outline. Dimensions in mm (inches) N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS VDSS 500V 40A ID(cont) RDS(on) 0.120 * Faster Switching * Lower Leakage * TO-267 Hermetic Package D G S StarMOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout. ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VDSS ID IDM VGS VGSM PD TJ , TSTG TL IAR EAR EAS Drain - Source Voltage Continuous Drain Current Pulsed Drain Current 1 Gate - Source Voltage Gate - Source Voltage Transient Total Power Dissipation @ Tcase = 25C Derate Linearly Operating and Storage Junction Temperature Range Lead Temperature : 0.063" from Case for 10 Sec. Avalanche Current1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 2 500 40 160 30 40 400 3.2 -55 to 150 300 40 50 2500 V A A V W W/C C A mJ 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Starting TJ = 25C, L = 3.13mH, RG = 25, Peak IL = 40A Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk 6/99 SML50W40 STATIC ELECTRICAL RATINGS (Tcase = 25C unless otherwise stated) BVDSS IDSS IGSS VGS(TH) ID(ON) RDS(ON) Characteristic Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0V) Gate - Source Leakage Current Gate Threshold Voltage On State Drain Current 2 Drain - Source On State Resistance 2 Test Conditions VGS = 0V , ID = 250A VDS = VDSS VDS = 0.8VDSS , TC = 125C VGS = 30V , VDS = 0V VDS = VGS , ID = 2.5mA VDS > ID(ON) x RDS(ON) Max VGS = 10V VGS = 10V , ID = 0.5 ID [Cont.] 2 40 0.120 Min. 500 Typ. Max. Unit V 25 250 100 4 A nA V A DYNAMIC CHARACTERISTICS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge3 Gate - Source Charge Gate - Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C RG = 0.6 Min. Typ. 7400 1000 380 312 50 127 14 16 54 5 Max. Unit 8900 1400 570 470 75 190 30 32 80 10 ns nC pF SOURCE - DRAIN DIODE RATINGS AND CHARACTERISTICS IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed Source Current1 Diode Forward Voltage2 Reverse Recovery Time Reverse Recovery Charge Test Conditions (Body Diode) (Body Diode) VGS = 0V , IS = - ID [Cont.] IS = - ID [Cont.] , dls / dt = 100A/s IS = - ID [Cont.] , dls / dt = 100A/s 620 14.7 Min. Typ. Max. Unit 40 A 160 1.3 V ns C THERMAL CHARACTERISTICS RJC RJA Characteristic Junction to Case Junction to Ambient 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380S , Duty Cycle < 2% 3) See MIL-STD-750 Method 3471 CAUTION -- Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed. Min. Typ. Max. Unit 0.31 C/W 40 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk 6/99 |
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